| PART |
Description |
Maker |
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| AS7C251MNTD18A AS7C251MNTD18A-166TQIN AS7C251MNTD1 |
2.5V 1M x 18 Pipelined SRAM with NTD 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current Mode PWMs; Package: DIP;
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构（带总线延迟结构28K × 36至流水线式的SRAM
128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM)
From old datasheet system
|
Cypress Semiconductor Corp.
|
| AS7C33128NTD18B AS7C33128NTD18B-200TQIN AS7C33128N |
3.3V 128Kx18 Pipelined SRAM with NTD 128K X 18 ZBT SRAM, 3 ns, PQFP100
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
